Fluoropolymers for 157-nm single-layer resists developed using a new etching rate estimation model (KI-Model)

Yasuhide Kawaguchi; Takashi Sasaki; Jun Irisawa; Osamu Yokokoji; Shigeo Irie; Akihiko Otoguro; Toshiro Itani; Kiyoshi Fujii

doi:10.1117/12.533907

14 May 2004 Fluoropolymers for 157-nm single-layer resists developed using a new etching rate estimation model (KI-Model)

Yasuhide Kawaguchi, Takashi Sasaki, Jun Irisawa, Osamu Yokokoji, Shigeo Irie, Akihiko Otoguro, Toshiro Itani, Kiyoshi Fujii

Author Affiliations +

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.533907
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

For 157-nm single-layer resists, dry etching resistance is an important issue because of the difficulty of striking a balance between 157-nm transparency and an acceptable level of dry etching resistance. To achieve an acceptable trade-off, the fluorine atom can be introduced into the resist polymer structure to obtain higher transparency, despite the fluorine atom’s high reactivity in the plasma etching process. We recently proposed a model for estimating dry-etching-resistance (the KI-model) and have shown that it can be effectively applied to the design of new fluoropolymer structures. Through simulation based on the KI-model, we were able to develop a new fluoropolymer with good dry etching resistance and high transparency. We found that a new protective group, 2-cyclohexylcyclohexanoxymethyl (CCOM), improved the characteristics of our novel fluoropolymer, compared with use of a MOM group, when used in the base resin of the resist. In this paper, we report on the usefulness of the KI-model for developing new fluorinated protective groups and new base polymers. Moreover, we have developed a new base fluoropolymer which has higher transparency and a similar degree of dry etching resistance as a monocyclic fluoropolymer with a CCOM protective group.

Citation Download Citation

Yasuhide Kawaguchi, Takashi Sasaki, Jun Irisawa, Osamu Yokokoji, Shigeo Irie, Akihiko Otoguro, Toshiro Itani, and Kiyoshi Fujii "Fluoropolymers for 157-nm single-layer resists developed using a new etching rate estimation model (KI-Model)", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.533907

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Polymers

Dry etching

Resistance

Etching

Chemical species

Transparency

Fluorine

Show All Keywords

Keywords/Phrases

Search In:

Publication Years