Paper
14 May 2004 High-temperature negative resist tunable for new lift-off applications
Medhat A. Toukhy, PingHung Lu, Kate Kao, Robert Plass, Ching-Hui Chen, Gerald L. Faerber
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Abstract
A new negative resist performance was demonstrated for elevated temperature, thick metal sputter process and lift-off application. This resist, AZ EXP nLOF 7000, can endure temperatures in excess of 220°C without pattern profile slope change. The applied resist thickness is ~ 3 μm and is processed to produce sufficient side wall slope adequate for up to 2μm sputter deposited metal thickness and lift-off process.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Medhat A. Toukhy, PingHung Lu, Kate Kao, Robert Plass, Ching-Hui Chen, and Gerald L. Faerber "High-temperature negative resist tunable for new lift-off applications", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.537561
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Photoresist processing

Metals

Semiconducting wafers

Lithography

193nm lithography

Deep ultraviolet

Deposition processes

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