Paper
14 May 2004 Microlens-induced pattern defect in DUV resist
Shu-Fen Tsai, Chih-You Chen, Chih-Chuan Chang, Tai-Wei Huang, Hann-Yii Gao, Chin-Yu Ku
Author Affiliations +
Abstract
During the wafer coating process, photoresist is spun-coated to desired thickness based on the process requirements. The residual resist is spun out of a wafer and partially deposited on the sidewall of the coater cup. The resist will dry out and become small particles. Those small resist particles may deposit on top of the resist film of the next processing wafer. The small particles act as micro-lens and produce distorted or unwanted patterns. In this work, the effect of those dried resist particles on resist patterning has been studied for both binary and PSM masks.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shu-Fen Tsai, Chih-You Chen, Chih-Chuan Chang, Tai-Wei Huang, Hann-Yii Gao, and Chin-Yu Ku "Microlens-induced pattern defect in DUV resist", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.534482
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Particles

Semiconducting wafers

Photomasks

Coating

Deep ultraviolet

Scanning electron microscopy

Optical lithography

Back to Top