Paper
14 May 2004 Optimized filtration for reduced defectivity and improved dispense recipe in 193-nm BARC lithography
Author Affiliations +
Abstract
The implementation of 193 nm lithography into production has been complicated by high defectivity issues. Many companies have been struggling with high defect densities, forcing process and lithography engineers to focus their efforts on chemical filtration instead of process development. After-etch defects have complicated the effort to reduce this problem. In particular it has been determined that chemical filtration at the 90 nm node and below is a crucial item which current industry standard pump recipes and material choices are not able to address. LSI Logic and Pall Corporation have been working together exploring alternative materials and resist pump process parameters to address these issues. These changes will free up process development time by reducing these high defect density issues. This paper provides a fundamental understanding of how 20nm filtration combined with optimized resist pump set-up and dispense can significantly reduce defects in 193nm lithography. The purpose of this study is to examine the effectiveness of 20 nanometer rated filters to reduce various defects observed in bottom anti reflective coating materials. Multiple filter types were installed on a Tokyo Electron Limited Clean Track ACT8 tool utilizing two-stage resist pumps. Lithographic performance of the filtered resist and defect analysis of patterned and non-patterned wafers were performed. Optimized pump start-up and dispense recipes also were evaluated to determine their effect on defect improvements. The track system used in this experiment was a standard production tool and was not modified from its original specifications.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Phong Do, Joe Pender, Thomas Lehmann, Leo P. Mc Ardle, Barry Gotlinsky, and Michael Mesawich "Optimized filtration for reduced defectivity and improved dispense recipe in 193-nm BARC lithography", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535557
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Cited by 1 scholarly publication and 4 patents.
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KEYWORDS
Etching

Lithography

193nm lithography

Industrial chemicals

Metals

Semiconducting wafers

Chemistry

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