Simulation of energy deposition for scattering electrons in resist layer

Yousong Tao; Yulin Zhang; Dayao Li

doi:10.1117/12.527506

14 May 2004 Simulation of energy deposition for scattering electrons in resist layer

Yousong Tao, Yulin Zhang, Dayao Li

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.527506
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

There is a key problem in the fabricating sub-micron mask with lithography, which is how to improve accuracy of the mask by reducing the proximity effects. Backscattering electrons is the main factor of causing proximity effects. In this paper, we use random probability number to determine whether there is an elastic scattering happening between resist and Cr plate in the EB lithographing process. The distribution of the scattering electrons’ energy deposition in PMIMA resist is simulated. The graphs of the forward scattering energy deposition and backscattering energy deposition have been given. This is useful to amend the proximity effects.

Citation Download Citation

Yousong Tao, Yulin Zhang, and Dayao Li "Simulation of energy deposition for scattering electrons in resist layer", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.527506

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