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28 May 2004 157-nm chromeless phase lithography with extremely high numerical aperture
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Chromeless Phase Lithography is known as an effective resolution enhancement technique for isolated line patterns. We fabricated a chromeless phase lithography mask for 157-nm lithography, and evaluated the lithographic performance using a 0.90 numerical aperture 157-nm microstepper. To obtain the best resolution, illumination condition was optimized to conventional illumination with 0.7 partial coherence (σ) using lithography simulation. In the exposure experiment, 30-nm-wide isolated line, 30-nm-wide 140-nm-pitch line-and-space, and 30-nm-wide static random access memory (SRAM) gate patterns were resolved. Further lithography simulation results indicated that the resolution limit of 24-nm would be obtained by eliminating the image degradation factors such as the aberration, flare, and central obscuration.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kunio Watanabe, Takuya Hagiwara, Seiji Matsuura, Toshifumi Suganaga , Toshiro Itani , and Kiyoshi Fujii "157-nm chromeless phase lithography with extremely high numerical aperture", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004);

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