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28 May 2004 Development of an accurate empirical model for ArF lithography
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Abstract
“Dose-MEF” was measured on ArF and KrF resists. The “dose-MEF” is very important factor for mask making spec. Conventional lithography simulation such as “Diffused aerial image simulation” does not predict the ArF experimental value precisely. In order to explain the dose-MEF of ArF resist, we introduce intensity biasing. The intensity biasing is caused by flare of exposure tool and another mechanism. The intensity biasing reduces the dose-MEF. Small dose-MEF leads to the relaxed mask spec.
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Shoji Mimotogi, Daisuke Kawamura, Takashi Sato, and Soichi Inoue "Development of an accurate empirical model for ArF lithography", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.536279
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