Paper
28 May 2004 Impact of measured pupil illumination fill distribution on lithography simulation and OPC models
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Abstract
Increasing miniaturization and decreasing k1 factors impose continuously growing demands on optical lithography. These requirements are reflected in the need for increasingly accurate lithography simulations, which are prerequisite for successful optical proximity correction (OPC) of the mask layout. Therefore, the physical conditions of the lithography tools and their impact on the resulting printed image have to be carefully considered. The illumination distribution in scanners and steppers is commonly simplified by a top-hat (rectangular cross-section) function. The illuminator is therefore assumed to consist of either completely dark or homogeneously bright areas. In this paper, we investigate the effect of using the measured source, which can deviate significantly from a simple top-hat function, on simulation results and OPC treatment. We compare simulations with measurement and show that there are cases where significant improvements occur by using the real source distribution.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christof T. Bodendorf, Ralph E. Schlief, and Ralf Ziebold "Impact of measured pupil illumination fill distribution on lithography simulation and OPC models", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.535575
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CITATIONS
Cited by 12 scholarly publications and 4 patents.
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KEYWORDS
Optical proximity correction

Process modeling

Lithographic illumination

Lithography

Scanners

Head

Photomasks

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