Paper
28 May 2004 Optical lithography with 157-nm technology
Theo M. Modderman, Hans Jasper, Herman Boom, Tammo Uitterdijk, Stephane Dana, Harry Sewell, Timothy K. O'Neil, Jan Mulkens, Martin Brunotte, Birgit Mecking, Toralf Gruner
Author Affiliations +
Abstract
This paper presents the progress of the 157 nm lithography program at ASML and Carl Zeiss SMT in 2003. The major technical problems are solved and the first full field 157 nm scanner was shipped to the industry for starting the process development. The progress in CaF2 material as well as production of CaF2 lens elements allow system to be produced for the 55 nm node. Contamination is shown to be at very low levels and a solution to reduce the influence of hard pellicles below 1 nm distortion is found. The first imaging results show a high depth of focus for 75 nm dense lines.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Theo M. Modderman, Hans Jasper, Herman Boom, Tammo Uitterdijk, Stephane Dana, Harry Sewell, Timothy K. O'Neil, Jan Mulkens, Martin Brunotte, Birgit Mecking, and Toralf Gruner "Optical lithography with 157-nm technology", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.535101
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KEYWORDS
Reticles

Pellicles

Lithography

Chemical elements

Oxygen

Contamination

Distortion

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