Paper
28 May 2004 Polarization effects in immersion lithography
Author Affiliations +
Abstract
OPC tools are already equipped with the most advanced models for image formation, capable of thin-film modeling, vector diffraction modeling and polarization modeling. Accurate simulation of immersion lithography, even in the context of OPC, does not pose any particular difficulty. In this paper we use the optical simulator of Calibre to study source polarization and its impact in process latitude and in proximity and linearity curves. More than 10nm difference in both curves is observed vs. source polarization at an immersion NA>1, projected to print the 45nm node. Simulation of large and arbitrary layout snippets confirm these results and demonstrate the feasibility of using advanced models in the context of OPC. Also, dry and water-immersion lithography are compared at the same NA<1 and the main differences in imaging are highlighted. The depth-of-focus increase in immersion is confirmed both in the ambient medium and also in the available DOF in resist. The DOF simulation results correlate closely with recent experimental work from other researchers.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Konstantinos Adam and Wilhelm Maurer "Polarization effects in immersion lithography", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.534322
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Cited by 7 scholarly publications.
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KEYWORDS
Polarization

Optical proximity correction

Immersion lithography

Water

Diffraction

Photomasks

Model-based design

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