Study of the impact of illumination intensity distribution on resist parameter modification

Daisuke Kawamura; Kazuya Sato; Shoji Mimotogi

doi:10.1117/12.535169

28 May 2004 Study of the impact of illumination intensity distribution on resist parameter modification

Daisuke Kawamura, Kazuya Sato, Shoji Mimotogi

Proceedings Volume 5377, Optical Microlithography XVII; (2004) https://doi.org/10.1117/12.535169
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

An Illumination intensity distribution of an exposure tool varies CD in simulation. In order to obtain reliable resist parameters, we studied the influence of the illumination intensity distribution in tuning the resist parameters and the accuracy of the simulation using the tuned resist parameters under different illumination conditions from in tuning. We tuned resist parameters with two models of illumination intensity to experimental FEM data. One model, "Nominal", was assumed to be uniform intensity and a nominal shape of an exposure tool. Another model, "Measured", was measured illumination intensity distribution with grating-pinhole mask. Under the same illumination condition to tuning, RMS of CD difference between experiment and simulation using "Measured" in tuning and simulation was 0.7nm smaller than that using "Nominal". But under the different illumination condition from tuning, RMS using "Measured" was 1.4 - 1.6nm smaller in total of 1D-pattern than that using "Nominal". In the specific pattern RMS using "Measured" was rather smaller than RMS using "Nominal". These results indicate that, in order to gain accurate simulation result, the accurate illumination intensity distributions is need in tuning and simulation. If using "Nominal" in tuning and in simulation, CD difference between experiment and simulation will enlarge in fine patterns.

Citation Download Citation

Daisuke Kawamura, Kazuya Sato, and Shoji Mimotogi "Study of the impact of illumination intensity distribution on resist parameter modification", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.535169

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Finite element methods

Photomasks

Semiconducting wafers

Critical dimension metrology

Data modeling

Scanning electron microscopy

Diffraction

Show All Keywords

Keywords/Phrases

Search In:

Publication Years