Sub-0.25-pm 50-W amplified excimer laser system for 193-nm lithography

Sergei V. Govorkov; Alexander O. Wiessner; Gongxue Hua; Timur V. Misuryaev; Andrey N. Knysh; Stefan Spratte; Peter Lokai; Tamas Nagy; Igor Bragin; Andreas Targsdorf; Thomas Schroeder; Hans-Stephan Albrecht; Rainer Desor; Thomas Schmidt; Rainer Paetzel

doi:10.1117/12.536374

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28 May 2004 Sub-0.25-pm 50-W amplified excimer laser system for 193-nm lithography

Sergei V. Govorkov, Alexander O. Wiessner, Gongxue Hua, Timur V. Misuryaev, Andrey N. Knysh, Stefan Spratte, Peter Lokai, Tamas Nagy, Igor Bragin, Andreas Targsdorf, Thomas Schroeder, Hans-Stephan Albrecht, Rainer Desor, Thomas Schmidt, Rainer Paetzel

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Proceedings Volume 5377, Optical Microlithography XVII; (2004) https://doi.org/10.1117/12.536374
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

We report performance parameters of a robust, 50 W, high repetition rate amplified ArF excimer laser system with FWHM bandwidth of less than 0.25 pm, 95% energy content bandwidth of less than 0.55 pm, and ultra-low ASE level. Proprietary design solutions enable stable operation with a substantial reliability margin at this high power level. We report on characterization of all the key parameters of importance for the next generation microlithography tools, such as spectrum and dose control stability, in various operating modes.

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Sergei V. Govorkov, Alexander O. Wiessner, Gongxue Hua, Timur V. Misuryaev, Andrey N. Knysh, Stefan Spratte, Peter Lokai, Tamas Nagy, Igor Bragin, Andreas Targsdorf, Thomas Schroeder, Hans-Stephan Albrecht, Rainer Desor, Thomas Schmidt, and Rainer Paetzel "Sub-0.25-pm 50-W amplified excimer laser system for 193-nm lithography", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.536374

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