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28 May 2004 Sub-0.25-pm 50-W amplified excimer laser system for 193-nm lithography
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Abstract
We report performance parameters of a robust, 50 W, high repetition rate amplified ArF excimer laser system with FWHM bandwidth of less than 0.25 pm, 95% energy content bandwidth of less than 0.55 pm, and ultra-low ASE level. Proprietary design solutions enable stable operation with a substantial reliability margin at this high power level. We report on characterization of all the key parameters of importance for the next generation microlithography tools, such as spectrum and dose control stability, in various operating modes.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergei V. Govorkov, Alexander O. Wiessner, Gongxue Hua, Timur V. Misuryaev, Andrey N. Knysh, Stefan Spratte, Peter Lokai, Tamas Nagy, Igor Bragin, Andreas Targsdorf, Thomas Schroeder, Hans-Stephan Albrecht, Rainer Desor, Thomas Schmidt, and Rainer Paetzel "Sub-0.25-pm 50-W amplified excimer laser system for 193-nm lithography", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.536374
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