The impact of MEEF through pitch for 120-nm contact holes

Lloyd C. Litt; Wei Wu; Will Conley; Kevin D. Lucas; Bernard J. Roman; Patrick Montgomery; Bryan S. Kasprowicz; Christopher J. Progler; Robert John Socha; Arjan Verhappen; Kurt E. Wampler; Erika Schaefer; Pat Cook; Jan-Pieter Kuijten; Wil Pijnenburg

doi:10.1117/12.537437

28 May 2004 The impact of MEEF through pitch for 120-nm contact holes

Lloyd C. Litt, Wei Wu, Will Conley, Kevin D. Lucas, Bernard J. Roman, Patrick Montgomery, Bryan S. Kasprowicz, Christopher J. Progler, Robert John Socha, Arjan Verhappen, Kurt E. Wampler, Erika Schaefer, Pat Cook, Jan-Pieter Kuijten, Wil Pijnenburg

Author Affiliations +

Proceedings Volume 5377, Optical Microlithography XVII; (2004) https://doi.org/10.1117/12.537437
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Each generation of semiconductor device technology drive new and interesting resolution enhancement technology (RET’s). The race to smaller and smaller geometries has forced device manufacturers to k1’s approaching 0.40. In this paper the authors will focus on the impact of mask exposure error factor (MEEF) through pitch for 120nm contacts with and without assist features. Experimental results show that although the addition of scatter bars improves depth of focus it has a negative effect on MEEF.

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Lloyd C. Litt, Wei Wu, Will Conley, Kevin D. Lucas, Bernard J. Roman, Patrick Montgomery, Bryan S. Kasprowicz, Christopher J. Progler, Robert John Socha, Arjan Verhappen, Kurt E. Wampler, Erika Schaefer, Pat Cook, Jan-Pieter Kuijten, and Wil Pijnenburg "The impact of MEEF through pitch for 120-nm contact holes", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.537437

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