Paper
23 July 1985 Lithography For A Submicron CMOS Process
P. Poppert, S. Novak, P. Wright
Author Affiliations +
Abstract
The principal requirements for a Submicron CMOS process are the ability to generate submicron geometries, and the ability to register the several masking layers closely enough to take full advantage of the benefits of those geometries. This paper discusses the suitability of a GCA 4800 Wafer stepper to fulfill those requirements.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Poppert, S. Novak, and P. Wright "Lithography For A Submicron CMOS Process", Proc. SPIE 0538, Optical Microlithography IV, (23 July 1985); https://doi.org/10.1117/12.947746
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KEYWORDS
Semiconducting wafers

Photoresist processing

Photomasks

Silicon

Optical lithography

Optical alignment

Reactive ion etching

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