Real-time optical information recording on semiconductor nanostructures

Peter G. Kasherininov; Andrei V. Kichaev; A. N. Lodygin; Vladimir K. Sokolov

doi:10.1117/12.547764

19 February 2004 Real-time optical information recording on semiconductor nanostructures

Peter G. Kasherininov, Andrei V. Kichaev, A. N. Lodygin, Vladimir K. Sokolov

Proceedings Volume 5381, Lasers for Measurements and Information Transfer 2003; (2004) https://doi.org/10.1117/12.547764
Event: Lasers for Measurements and Information Transfer 2003, 2003, St. Petersburg, Russian Federation

Abstract

New technique of optical information recording on the semiconductor MIS-structures with a thin nano-dimensional dielectric layer (TI), (M(TI)S) is discussed. This technique provides high speed of optical information recording (up to 10⁶ cycle per second) and also gives an opportunity to design new types of the optoelectronic devices.

Citation Download Citation

Peter G. Kasherininov, Andrei V. Kichaev, A. N. Lodygin, and Vladimir K. Sokolov "Real-time optical information recording on semiconductor nanostructures", Proc. SPIE 5381, Lasers for Measurements and Information Transfer 2003, (19 February 2004); https://doi.org/10.1117/12.547764

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