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19 February 2004 Real-time optical information recording on semiconductor nanostructures
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Proceedings Volume 5381, Lasers for Measurements and Information Transfer 2003; (2004) https://doi.org/10.1117/12.547764
Event: Lasers for Measurements and Information Transfer 2003, 2003, St. Petersburg, Russian Federation
Abstract
New technique of optical information recording on the semiconductor MIS-structures with a thin nano-dimensional dielectric layer (TI), (M(TI)S) is discussed. This technique provides high speed of optical information recording (up to 106 cycle per second) and also gives an opportunity to design new types of the optoelectronic devices.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter G. Kasherininov, Andrei V. Kichaev, A. N. Lodygin, and Vladimir K. Sokolov "Real-time optical information recording on semiconductor nanostructures", Proc. SPIE 5381, Lasers for Measurements and Information Transfer 2003, (19 February 2004); https://doi.org/10.1117/12.547764
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