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29 July 2004 Digital CMOS interface circuit for current and capacitance sensing
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Abstract
A CMOS digital interface chip has been designed and implemented in standard 1.5 μm n-well CMOS technology for detection of current and capacitance variations across a sensing element. An on-chip digitally variable sensor element simulating current and capacitance is monolithically integrated with the readout circuitry. The chip gives an 8-bit digital output and can detect a minimum current and capacitance up to 150 μA and 2.5 fF, respectively.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ashok Srivastava "Digital CMOS interface circuit for current and capacitance sensing", Proc. SPIE 5389, Smart Structures and Materials 2004: Smart Electronics, MEMS, BioMEMS, and Nanotechnology, (29 July 2004); https://doi.org/10.1117/12.540114
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