Poly (Methylstyrene - Dimethylsiloxane) Block Copolymers As Bilevel Resists

M. A. Hartney; A. E. Novembre

doi:10.1117/12.947820

18 April 1985 Poly (Methylstyrene - Dimethylsiloxane) Block Copolymers As Bilevel Resists

M. A. Hartney, A. E. Novembre

Proceedings Volume 0539, Advances in Resist Technology and Processing II; (1985) https://doi.org/10.1117/12.947820
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

Multi-level resist systems are rapidly becoming essential in the drive towards submicron lithography. Such systems offer many inherent advantages over single level schemes, such as planarization of underlying substrate, higher resolution and formation of high aspect ratio patterns. Other advantages, particular to specific exposure technologies, can also be found. These include minimization of backscatter and proximity effects for electron beam lithography or reduction of standing wave effects and depth of focus problems for photolithography.

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M. A. Hartney and A. E. Novembre "Poly (Methylstyrene - Dimethylsiloxane) Block Copolymers As Bilevel Resists", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947820

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