Silicon Oxynitride As A Barrier Layer In A 3-Layer Photoresist System

John A. Underhill; Van Son Nguyen; Michael Kerbaugh; Dianne Sundling

doi:10.1117/12.947819

18 April 1985 Silicon Oxynitride As A Barrier Layer In A 3-Layer Photoresist System

John A. Underhill, Van Son Nguyen, Michael Kerbaugh, Dianne Sundling

Proceedings Volume 0539, Advances in Resist Technology and Processing II; (1985) https://doi.org/10.1117/12.947819
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

A plasma-enhanced chemically vapor deposited (PECVD) silicon oxynitride (Si-O-N) was used in a 3-layer resist system in combination with a 0.42 na lens to provide device process developers with a means for extending photolithography down to 0.5 pm feature size. This delayed the need for using more expensive lithography alternatives. In this paper, the procedures used for forming the 3-layer structure are outlined. Typical plasma deposition conditions are cited. Results from the comparison among Si-N-0 films of differing composition are described in terms of refractive index, stress, and pinhole densities for varying ratios of S:N:O. Etch rates and their ratios pertinent to transferring the image into base resist are reported. Lift-off profiles were obtained and a pol*mide was used for a base which remains soluble in common solvents after being baked at 200^oC. Scanning electron micrographs (SEMs) of sub-micron image profiles are shown and linewidth measurement data are presented to show linewidth precision and constant bias into the 0.7 μm range. The latter demonstrates the adequacy of this technique for sub-micron device development.

Citation Download Citation

John A. Underhill, Van Son Nguyen, Michael Kerbaugh, and Dianne Sundling "Silicon Oxynitride As A Barrier Layer In A 3-Layer Photoresist System", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947819

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