Alkali metal adsorption on the differently oriented GaAs surfaces

S. E. Kulkova; Arsen V. Subashiev; D. V. Khanin

doi:10.1117/12.555370

5 April 2004 Alkali metal adsorption on the differently oriented GaAs surfaces

S. E. Kulkova, Arsen V. Subashiev, D. V. Khanin

Proceedings Volume 5400, Seventh International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2004) https://doi.org/10.1117/12.555370
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Full-potential linearized augmented plane wae (FLAPW) method is used to investigate absorption of K, Na, and Cs on GaAs (110) and (001) -- oriented surfaces. The layer-resolved densities of states, electron energy spectrum and valence charge-densities are analyzed. Coverage dependence of the work function is obtained and is found to be in satisfactory agreement with experiments. The role of oxygen adsorption in GaAs activation to negative electron affinity state is discussed.

Citation Download Citation

S. E. Kulkova, Arsen V. Subashiev, and D. V. Khanin "Alkali metal adsorption on the differently oriented GaAs surfaces", Proc. SPIE 5400, Seventh International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 April 2004); https://doi.org/10.1117/12.555370

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