A self-consistent modeling of the leakage current through thin oxides

A. S. Arkhipov; E. A. Burovski; I. Ya. Polishchuk

doi:10.1117/12.562733

28 May 2004 A self-consistent modeling of the leakage current through thin oxides

A. S. Arkhipov, E. A. Burovski, I. Ya. Polishchuk

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562733
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

A simple computationally effective semi-analytical macroscopic technique of self-consistent calculations of the electrical properties of the MOS structures with ultra thin high-k gate oxide film is developed. Calculated gate voltage - gate leakage [substrate-injected direct and Fowler-Nordheim (FN) tunneling] and gate capacitance characteristics are presented and discussed. The Si/oxide band offset is shown to be the main parameter affecting leakage. The stepwise behaviour of the I - V characteristics is predicted. A contribution of the FN injection is discussed.

Citation Download Citation

A. S. Arkhipov, E. A. Burovski, and I. Ya. Polishchuk "A self-consistent modeling of the leakage current through thin oxides", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.562733

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available