Translator Disclaimer
28 May 2004 Comparative study of inductively coupled and microwave BF3 plasmas for microelectronic technology applications
Author Affiliations +
Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004)
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
A comparison of ICP and microwave plasma sources was carried out under the same discharge conditions, in the same discharge chamber and using the same diagnostics method. Investigations were fulfilled in a wide range of external discharge parameters (at pressures 0.5 - 20 mTorr and for powers deposited in the plasma 400 - 1500 W) in boron trifluoride and in argon discharges. A variety of plasma parameters (Te, ne, n+, EEDF) and their radial profiles at a 2 cm distance above a wafer holder were determined by using single Langmuir probe technique. Analysis of measurements has shown that the charged particles concentrations in ICP plasma are higher than are obtainable in microwave discharge, for deposited power 1.2kW the ICP source produced ion number density ~1012 cm-3. The required plasma uniformity can be maintained in ICP plasma over a more wide range of external discharge parameters then in microwave plasma. The use of microwave plasma source gives a bi-Maxwellian type EEDF, whereas the EEDF of ICP plasma is close to the single Maxwellian distribution with electron temperature higher then the temperature of cold electrons in microwave discharge. BF3 plasma is electronegative, with a degree of electronegativity ~0.3-0.5 for both plasma sources.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yakov N. Sukhanov, Alexey P. Ershov, Konstantin V. Rudenko, and Alexander A. Orlikovsky "Comparative study of inductively coupled and microwave BF3 plasmas for microelectronic technology applications", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004);


Back to Top