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28 May 2004 Influence of growth temperature on the easy magnetization axis switch and domain structure in Fe/GaAs(100) structures
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562664
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
Dependence of the easy magnetization axis switch and domain structure in Fe films grown on GaAs(100) substrates on the growth temperature TS and deposition rate υ was investigated. The easy magnetization axis direction was determined from ferromagnetic resonance measurements in tangentially magnetized Fe films. It was found for films grown at substrate temperature TS ≤;140°C that with decreasing films thickness t smaller some critical thickness t* the easy magnetization axis direction switches from [100] to [110] crystallographic axis while for films grown at substrates temperatures Ts>140°C the easy magnetization direction was along [100] axis at decreasing the film’s thickness down to 10 Å. The critical thickness t* of “switched” film nonmonotonically depends on the deposition rate and was determined at t* ≈ 21, 15 and 28 Å for deposition rates υ ≈1.4 ; 3 and 4 Å/min, respectively. Domain structures in FeGaAs(100) films are discussed.
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Yu. A. Filimonov, A. S. Dzhumaliev, A. V. Kozhevnikov, and S. L. Vysotsky "Influence of growth temperature on the easy magnetization axis switch and domain structure in Fe/GaAs(100) structures", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.562664
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