Influence of growth temperature on the easy magnetization axis switch and domain structure in Fe/GaAs(100) structures

Yu. A. Filimonov; A. S. Dzhumaliev; A. V. Kozhevnikov; S. L. Vysotsky

doi:10.1117/12.562664

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28 May 2004 Influence of growth temperature on the easy magnetization axis switch and domain structure in Fe/GaAs(100) structures

Yu. A. Filimonov, A. S. Dzhumaliev, A. V. Kozhevnikov, S. L. Vysotsky

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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562664
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

Dependence of the easy magnetization axis switch and domain structure in Fe films grown on GaAs(100) substrates on the growth temperature T_S and deposition rate υ was investigated. The easy magnetization axis direction was determined from ferromagnetic resonance measurements in tangentially magnetized Fe films. It was found for films grown at substrate temperature T_S ≤;140°C that with decreasing films thickness t smaller some critical thickness t^* the easy magnetization axis direction switches from [100] to [110] crystallographic axis while for films grown at substrates temperatures T_s>140°C the easy magnetization direction was along [100] axis at decreasing the film’s thickness down to 10 Å. The critical thickness t^* of “switched” film nonmonotonically depends on the deposition rate and was determined at t^* ≈ 21, 15 and 28 Å for deposition rates υ ≈1.4 ; 3 and 4 Å/min, respectively. Domain structures in FeGaAs(100) films are discussed.

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Yu. A. Filimonov, A. S. Dzhumaliev, A. V. Kozhevnikov, and S. L. Vysotsky "Influence of growth temperature on the easy magnetization axis switch and domain structure in Fe/GaAs(100) structures", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.562664

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