Investigation of transport mechanisms in a-SiGe:H/c-Si heterostructures

Alexei A. Sherchenkov; Boris G. Budaguan; Alexander V. Mazurov

doi:10.1117/12.558758

28 May 2004 Investigation of transport mechanisms in a-SiGe:H/c-Si heterostructures

Alexei A. Sherchenkov, Boris G. Budaguan, Alexander V. Mazurov

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.558758
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

The results of the investigation of the properties of a-SiGe:H/c-Si heterostructures fabricated by LF (55 kHz) PECVD are presented. Electrical model describing current-voltage characteristics of heterostructure in wide range of forward biases was developed. It was established that in a-SiGe:H/c-Si heterostructures the multitunnelling capture-emission mechanism prevails in low voltage range (U<1.0 V). At applied voltage higher than 1.5 V space charge limited current predominates. In the low reverse voltage range change of the transport mechanism was observed, which is connected with considerable decrease of band gap in amorphous alloy. In the high reverse voltage range ([U]>1.5 V) reverse current is controlled by the generation and recombination in depletion layer of a-SiGe:H.

Citation Download Citation

Alexei A. Sherchenkov, Boris G. Budaguan, and Alexander V. Mazurov "Investigation of transport mechanisms in a-SiGe:H/c-Si heterostructures", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.558758

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