Modeling diffusion of ion-implanted impurity in silicon under a temperature gradient

Valery I. Rudakov; Vladimir V. Ovcharov; Alexander V. Bashmakov

doi:10.1117/12.562660

28 May 2004 Modeling diffusion of ion-implanted impurity in silicon under a temperature gradient

Valery I. Rudakov, Vladimir V. Ovcharov, Alexander V. Bashmakov

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562660
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

For description of the diffusion process in a temperature field at the constant temperature gradient in semi-infinite media from an extended source of infinite extent and an instantaneous plane source the simple formulae taking into account the temperature dependence of diffusion coefficient is proposed. The analytical solution of the equation describing thermodiffusion for same conditions for gaussian form source is given. Since in this solution the temperature dependence of diffusion coefficient is not taken account the limits of its applicability is examined.

Citation Download Citation

Valery I. Rudakov, Vladimir V. Ovcharov, and Alexander V. Bashmakov "Modeling diffusion of ion-implanted impurity in silicon under a temperature gradient", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.562660

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