Optimization of double-barrier-doped heterostructure AlGaAs/GaAs/AlGaAs/GaAs for ultra high frequency FET

G. B. Galiev; V. E. Kaminskii; Vladimir A. Kul'bachinskii

doi:10.1117/12.558789

28 May 2004 Optimization of double-barrier-doped heterostructure AlGaAs/GaAs/AlGaAs/GaAs for ultra high frequency FET

G. B. Galiev, V. E. Kaminskii, Vladimir A. Kul'bachinskii

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.558789
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

The conductivity and Hall mobility have been measured in heterostructures with quantum well (QW) as functions of temperature and the QW width. If a tunnel-transparent barrier is inserted in the middle of a QW, the mobility increases in narrow wells and decreases in wide wells. The experimental data have been compared with the calculated dependences. It has been shown that the number of filled quantum well subbands depends on the well width and the presence of a barrier.

Citation Download Citation

G. B. Galiev, V. E. Kaminskii, and Vladimir A. Kul'bachinskii "Optimization of double-barrier-doped heterostructure AlGaAs/GaAs/AlGaAs/GaAs for ultra high frequency FET", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.558789

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