InP-based multiwavelength QWIP technology

Ayub M Fathimulla; Harry Hier; Leye Aina; Terrance Worchesky; Parvez Uppal

doi:10.1117/12.542366

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30 August 2004 InP-based multiwavelength QWIP technology

Ayub M Fathimulla, Harry Hier, Leye Aina, Terrance Worchesky, Parvez Uppal

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Proceedings Volume 5406, Infrared Technology and Applications XXX; (2004) https://doi.org/10.1117/12.542366
Event: Defense and Security, 2004, Orlando, Florida, United States

Abstract

This paper describes the design, growth and fabrication characterization of novel multi-wavelength QWIP wafers based on InP material systems. We designed, grew, fabricated and characterized AlGaInAs/GaInAs QWIPs suitable for operation at 3-5 μm, and 8-12 μm spectral range. We fabricated mid-wave IR 320 x 250 focal plane arrays, hybridized them with Si -readout circuits and performed radiometric and imaging tests. Excellent imaging results of the mid-wave IR focal plane arrays with an operability of 88% and mean NEDT of 0.09K have been achieved. To our knowledge, this is the first imaging with InP based QWIPs focal plane array.

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Ayub M Fathimulla, Harry Hier, Leye Aina, Terrance Worchesky, and Parvez Uppal "InP-based multiwavelength QWIP technology", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); https://doi.org/10.1117/12.542366

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