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4 August 2004 Synthetic IR signature control using emissivity enhancement techniques
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In this report, we show both theoretically and experimentally how the IR signature of a semiconductor scene (with band gap energy Eg) can be monitored through contactless emissivity control even if this scene thermometric temperature is kept constant. More specifically, we show how a scene emissivity in the spectral band beyond the fundamental absorption range (ω2 < Eg / h, 3 to 5 μm and 8 to 12 μm transparency windows) can be dynamically (frame frequency > 20 kHz) monitored by a shorter wavelength photo excitation of non-equilibrium charge carriers (ω1 > Eg/h, "visible range"). Experimental tests performed on Si and Ge scenes (300 < T < 600 K), demonstrate optically generated cold and hot images and, what is more important, negligible temperature contrast between an object and a background (Stealth effect in IR).
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Volodymyr K. Malyutenko, Oleg Yu. Malyutenko, Vyacheslav V. Bogatyrenko, Sergiy V. Chyrchyk, James R. Kircher, Robert L. Murrer, and Donald R. Snyder "Synthetic IR signature control using emissivity enhancement techniques", Proc. SPIE 5408, Technologies for Synthetic Environments: Hardware-in-the-Loop Testing IX, (4 August 2004);

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