High-reflectivity intracavity Bragg mirrors for the far-infrared p-Ge laser

Todd W. Du Bosq; Andrei V. Muravjov; Robert E. Peale

doi:10.1117/12.542548

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8 September 2004 High-reflectivity intracavity Bragg mirrors for the far-infrared p-Ge laser

Todd W. Du Bosq, Andrei V. Muravjov, Robert E. Peale

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Proceedings Volume 5411, Terahertz for Military and Security Applications II; (2004) https://doi.org/10.1117/12.542548
Event: Defense and Security, 2004, Orlando, Florida, United States

Abstract

Multi-layer mirrors capable of >99.9% reflectivity at ~100 micron wavelengths were constructed using thin silicon etalons separated by empty gaps. Due to the large difference between the index of refraction of silicon (3.384) and vacuum (1), calculations indicate that only three periods are required to produce 99.9% reflectivity. The mirror was assembled from high purity silicon wafers, with resistivity over 4000 ohm-cm to reduce free carrier absorption. Wafers were double side polished with faces parallel within 10 arc seconds. The multi-layer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser.

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Todd W. Du Bosq, Andrei V. Muravjov, and Robert E. Peale "High-reflectivity intracavity Bragg mirrors for the far-infrared p-Ge laser", Proc. SPIE 5411, Terahertz for Military and Security Applications II, (8 September 2004); https://doi.org/10.1117/12.542548

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