Measurement and modeling of high-performance lateral p-i-n photodetectors

W. P. Giziewicz; Henry K.H. Choy; Clifton G. Fonstad Jr.; Sheila Prasad

doi:10.1117/12.558399

7 April 2004 Measurement and modeling of high-performance lateral p-i-n photodetectors

W. P. Giziewicz, Henry K.H. Choy, Clifton G. Fonstad Jr., Sheila Prasad

Proceedings Volume 5445, Microwave and Optical Technology 2003; (2004) https://doi.org/10.1117/12.558399
Event: Microwave and Optical Technology 2003, 2003, Ostrava, Czech Republic

Abstract

Laterial p-i-n photodiodes have been produced in a standard, unmodified commercial GaAs integrated circuit process (Vitesse Semiconductor Inc. HGaAs IV and V). The devices were modelled using the MEDICI simulation package, achieving a very good fit to both capacitance and DC light response measuremnts. The simulation recreated an interesting feature of the devices, wherein the detectors go from a low-performance to high-performance regime abruptly at a specific reverse bias. An analysis of the simulated behavior of the depletion region in the nominally intrinsic region of the device provided a partial answer to the physics behind this bias point. A second generation of devices of different geometries was fabricated and tested. The newer fabrication process showed a lower performance transition (~0.6 V) than the previous process (~4 V) for an identical layout geometry. Preliminary high-speed measurements of the newer devices are quite encouraging.

Citation Download Citation

W. P. Giziewicz, Henry K.H. Choy, Clifton G. Fonstad Jr., and Sheila Prasad "Measurement and modeling of high-performance lateral p-i-n photodetectors", Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); https://doi.org/10.1117/12.558399

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