PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
This paper analyses the temperature dependence of device characteristics. The degradation of the device performance due to thermal stress has been explained in detail. The paper also includes a theoretical explanation to the significant temperature effects on transconductance and cut off frequency for microwave frequency application.
Jyotika Jogi,Sujata Pandey, andR. S. Gupta
"Temperature-dependent characterization of InAlAs/InGaAs/InP LMHEMT for microwave frequency application", Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); https://doi.org/10.1117/12.560662
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Jyotika Jogi, Sujata Pandey, R. S. Gupta, "Temperature-dependent characterization of InAlAs/InGaAs/InP LMHEMT for microwave frequency application," Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); https://doi.org/10.1117/12.560662