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20 August 2004 257-nm wavelength mask inspection for 65-nm node reticles
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557725
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
Abstract
We have developed a new photomask inspection method which has capability for inspecting 65nm technology node reticles using 257nm wavelength light source. This new method meets the requirement for the current mask inspection system using KrF inspection light source to be employed even in the fabrication of photomasks for 65nm technology node by the appearance of immersion technology using ArF wavelength. This paper discusses the detection capability of the 257nm wavelength inspection system for the defects on the 6% ArF attenuated phase shifting masks for 65nm node, using DSM based test pattern mask.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryoji Yoshikawa, Hiroyuki Tanizaki, Tomohide Watanabe, Hiromu Inoue, Riki Ogawa, Satoshi Endo, Masami Ikeda, Yoichiro Takahashi, and Hidehiro Watanabe "257-nm wavelength mask inspection for 65-nm node reticles", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557725
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