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20 August 2004 Actinic aerial image measurement for qualification of defect on 157-nm photomask
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557762
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
Abstract
Measurement by AIMS is the final step of mask defect control, and its accuracy is the critical issue to make guaranty and improve the mask quality. AIMS157 has developed by Carl Zeiss SMS GmbH and is expected to make a contribution to accelerate the 157nm lithography technology development. AIMS157 has been challenging to solve 157nm specific optical issues with accuracy for 65nm node photomask specifications. This paper discusses the defect measurement by AIMS157. Evaluation using programmed defect mask, repeatability is analyzed changing the optical parameters. Static and dynamic measurements were evaluated and the result shows the improved accuracy. It shows the possibility to be applied on 65nm node and smaller feature size.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Yasui, Iwao Higashikawa, Peter Kuschnerus, Wolfgang Degel, Klaus Boehm, Axel M. Zibold, Yuji Kobiyama, Jan-Peter Urbach, Christof M. Schilz, and Silvio Teuber Semmler "Actinic aerial image measurement for qualification of defect on 157-nm photomask", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557762
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