Advanced photomask repair technology for 65-nm lithography (1)

Yasutoshi Itou; Yoshiyuki Tanaka; Nobuyuki Yoshioka; Yasuhiko Sugiyama; Ryoji Hagiwara; Haruo Takahashi; Osamu Takaoka; Junichi Tashiro; Katsumi Suzuki; Mamoru Okabe; Syuichi Kikuchi; Atsushi Uemoto; Anto Yasaka; Tatsuya Adachi; Naoki Nishida; Toshiya Ozawa

doi:10.1117/12.557789

20 August 2004 Advanced photomask repair technology for 65-nm lithography (1)

Yasutoshi Itou, Yoshiyuki Tanaka, Nobuyuki Yoshioka, Yasuhiko Sugiyama, Ryoji Hagiwara, Haruo Takahashi, Osamu Takaoka, Junichi Tashiro, Katsumi Suzuki, Mamoru Okabe, Syuichi Kikuchi, Atsushi Uemoto, Anto Yasaka, Tatsuya Adachi, Naoki Nishida, Toshiya Ozawa

Author Affiliations +

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557789
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

The 65nm photomasks have to meet tight specifications and improve the production yield due to high production cost. The 65nm optical lithography has two candidates, 157nm and 193nm, and we are developing two types of experimental photomask repair systems, FIB and EB, for the 65nm generation. We designed and developed FIB and EB beta systems. The platforms of beta systems consist of anti-vibration design to reduce outer disturbance for repair accuracy. Furthermore, we developed a new CPU control system, especially the new beam-scanning control system that makes it possible to control the beam position below nanometer order. These developments will suppress transmission loss and improve repair accuracy of the systems. We also adopt the 6-inch mask SMIF pod system and the CAD data linkage system that matches the EB mask data image with the SED image to search defects in photomasks with sophisticated patterns such as OPC patterns. We evaluate the EB repair process, and confirm that it generates carbon film, which has possibility to generate the same quality as that of FIB. Furthermore, we confirmed that EB and FIB repair systems were able to deposit carbon film and etch chrome, quartz, and MoSi. In this paper, we report the photomask defect repair experimental systems and the feasibility study on photomask defect repair for the 65nm generation.

Citation Download Citation

Yasutoshi Itou, Yoshiyuki Tanaka, Nobuyuki Yoshioka, Yasuhiko Sugiyama, Ryoji Hagiwara, Haruo Takahashi, Osamu Takaoka, Junichi Tashiro, Katsumi Suzuki, Mamoru Okabe, Syuichi Kikuchi, Atsushi Uemoto, Anto Yasaka, Tatsuya Adachi, Naoki Nishida, and Toshiya Ozawa "Advanced photomask repair technology for 65-nm lithography (1)", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557789

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