Comparative study of two negative CAR resists: EN-024M and NEB 31

Ki-Ho Baik; Robert Dean; Homer Y. Lem; Stephen P. Osborne; Mark A. Mueller; Damon M. Cole

doi:10.1117/12.557718

20 August 2004 Comparative study of two negative CAR resists: EN-024M and NEB 31

Ki-Ho Baik, Robert Dean, Homer Y. Lem, Stephen P. Osborne, Mark A. Mueller, Damon M. Cole

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557718
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

In this paper, two negative-tone chemically amplified resists (CAR) are evaluated. The methodology and results are compared and discussed. The resists include EN-024M from TOK, and NEB 31 from Sumitomo. Both resists show high contrast, good dry etch selectivity, and high environmental stability. EN-024M showed good coating uniformity while NEB31 showed a coating uniformity problem. This was a round “dimple” approximately one centimeter in diameter of different thickness and density at the center of the plate. We addressed the “dimple” coating problem as described in the paper. Optimum PAB and PEB temperatures and nominal to maximum doses for isolated features were determined by running a matrix of PAB and PEB temperatures along with a dose series. We evaluated the process and compared the lithographic performance in terms of dose sensitivity, dose and bake latitude, resolution, resist profile, OPC (Optical Proximity Correction) pattern fidelity, CD uniformity, environmental stability, Line Edge Roughness (LER) and etching bias and resistance.

Citation Download Citation

Ki-Ho Baik, Robert Dean, Homer Y. Lem, Stephen P. Osborne, Mark A. Mueller, and Damon M. Cole "Comparative study of two negative CAR resists: EN-024M and NEB 31", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557718

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