High-alignment-accuracy EB writing of phase shift image for 65-nm node masks

Norio Kimura; Tadashi Komagata; Yasutoshi Nakagawa; Nobuo Gotoh; Kazumitsu Tanaka

doi:10.1117/12.557758

20 August 2004 High-alignment-accuracy EB writing of phase shift image for 65-nm node masks

Norio Kimura, Tadashi Komagata, Yasutoshi Nakagawa, Nobuo Gotoh, Kazumitsu Tanaka

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557758
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

We have developed a high alignment-accuracy electron beam (EB) mask writing processes of phase shift layer using alignment-and-height marks. The new process consists of (1) First layer writing with “alignment-and-height” marks on peripheral area of the mask patterns; (2) Development of resist, Cr etching of the first layer pattern and coating of new resist; (3) Measurement of position, height and rotation of “alignment-and-height” marks with electron beams; (4) Create alignment map, scanning distortion correction map for the second layer writing; (5) Second layer pattern writing using these correction maps. We performed a set of evaluation test of the processes and confirmed that an overlay alignment accuracy of within 16nm (3 sigma) between first and second layer is attainable, and thus, practically effective for phase shift image writing of 65nm node masks.

Citation Download Citation

Norio Kimura, Tadashi Komagata, Yasutoshi Nakagawa, Nobuo Gotoh, and Kazumitsu Tanaka "High-alignment-accuracy EB writing of phase shift image for 65-nm node masks", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557758

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