Linearity improvement for CD metrology with deep UV microscope

Takeshi Yamane; Takashi Hirano

doi:10.1117/12.557812

20 August 2004 Linearity improvement for CD metrology with deep UV microscope

Takeshi Yamane, Takashi Hirano

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557812
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

Linearity improvement for critical dimension (CD) measurement of a photomask by the simulation assist (SA) method with a deep-UV microscope is proposed. In the conventional method, if the measurement pattern is resolved insufficiently with a deep-UV microscope, the CD cannot maintain linearity to the actual pattern size. In the SA method, the insufficient resolution is canceled by the actual image and the simulated image, and therefore the CD can maintain linearity even if the pattern is resolved insufficiently. The experiment result indicates that the SA method improves CD linearity of the conventional method; furthermore, it improves repeatability of hole patterns.

Citation Download Citation

Takeshi Yamane and Takashi Hirano "Linearity improvement for CD metrology with deep UV microscope", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557812

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