Paper
20 August 2004 Results from a new die-to-database reticle inspection platform
Author Affiliations +
Abstract
A new DUV die-to-database high-resolution reticle defect inspection platform has been developed. This platform is designed to meet the 90nm through 65nm node 248/193nm lithography reticle qualification requirements of the IC industry. These design nodes typically include: COG layers, EPSM layers, and AltPSM layers, plus aggressive OPC which includes jogs, serifs, and SRAF (sub-resolution assist features). The architecture and technology of the new inspection platform is described. Die-to-database inspection results are shown on standard programmed defect test reticles, as well as, advanced 90nm through 65nm node reticles from industry sources. Results show high sensitivity and low false detections being achieved.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William H. Broadbent, James N. Wiley, Zain K. Saidin, Sterling G. Watson, David S. Alles, Larry S. Zurbrick, and Chris A. Mack "Results from a new die-to-database reticle inspection platform", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557784
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Reticles

Inspection

Sensors

Databases

Lithography

Image transmission

Quartz

Back to Top