Spin stream develop process for ZEP resist

Jaecheon Shin; Tae-Joong Ha; Bo-Kyung Choi; Oscar Han

doi:10.1117/12.557710

20 August 2004 Spin stream develop process for ZEP resist

Jaecheon Shin, Tae-Joong Ha, Bo-Kyung Choi, Oscar Han

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557710
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

ZEP is a field-proven stable E-Beam resist for photo-mask manufacturing. The spin-spray develop method has been widely used for ZEP resist processing. Recently, we have successfully adopted the spin-stream develop process for ZEP resist by using modified TEL MARK-8 wafer process track. This paper presents a comparison result of CD uniformity between the conventional spin-spray method and new spin-stream method on 6-inch production halftone phase shift masks. In this process, we apply low temperature(18 deg. C) develop solution in room temperature ambient. The spin-stream process with low temperature solution is found to be a suitable recipe for high-end phase shift mask manufacturing with under 10 nm CD uniformity (3sigma) in 120mm X 120mm area. Moreover, the modified MARK-8 track can provide both of a FEP and a ZEP process module in one unit, and this advantage reduces the cost of ownership for a high-end mask manufacturing facility.

Citation Download Citation

Jaecheon Shin, Tae-Joong Ha, Bo-Kyung Choi, and Oscar Han "Spin stream develop process for ZEP resist", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557710

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