Paper
20 September 2004 Dependence of EUV emission properties on laser wavelength
Author Affiliations +
Abstract
Extreme ultraviolet (EUV) emission from laser produced tin plasma was investigated for 1064, 532 and 266 nm laser wavelengths. The EUV conversion with tin target tends to be high for shorter laser wavelength and is optimized at 4-5x1010 W/cm2 for 1064 and 532 nm. The EUV emission exhibits laser wavelength dependence in terms of angular distribution and structures of emission spectra. It is found that spectra for 532 nm and 266 nm showed spectral dips at around 13.5 nm and these dips are well replicated in computer simulations. Both the angular distribution together with the spectral dips may suggest existence of opaque plasmas surrounding the EUV emission region.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michiteru Yamaura, Shigeaki Uchida, Atsushi Sunahara, Yoshinori Shimada, Kazuhisa Hashimoto, Chiyoe Yamanaka, Keisuke Shigemori, Shinsuke Fujioka, Tomoharu Okuno, Keiji Nagai, Takayoshi Norimatsu, Hiroaki Nishimura, Katsunobu Nishihara, Noriaki Miyanaga, and Yasukazu Izawa "Dependence of EUV emission properties on laser wavelength", Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); https://doi.org/10.1117/12.557207
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Cited by 3 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Plasma

Tin

Laser applications

Optical simulations

Absorption

Excimer lasers

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