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15 September 2004 Far- and near-field characterization of a photonic-crystal-based microcavity on silicon-on-insulator
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Abstract
We report the spectroscopic characterisation of an integrated microcavity designed for the 1.5μm telecommunication wavelength by using both near- and far-field techniques. We show the establishment of the cavity mode for wavelengths ranging from the photonic band gap to the resonance by using a scanning near-field optical microscope in collection mode. The respective contributions of out of plane losses and evanescent field are clearly identified. Transmission measurements on a broad spectral range are performed and results obtained by the two techniques are in very good agreement.
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Benoit Cluzel, Davy Gerard, Emmanuel Picard, Thomas Charvolin, Vincent Calvo, Emmanuel Hadji, and Frederique de Fornel "Far- and near-field characterization of a photonic-crystal-based microcavity on silicon-on-insulator", Proc. SPIE 5450, Photonic Crystal Materials and Nanostructures, (15 September 2004); https://doi.org/10.1117/12.545764
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