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18 August 2004 A 3x2 waveguide switch based on SiGe for C-band operation
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Abstract
A waveguide switch structure with three input and two output ports is designed in SiGe/Si material for the operation around 1.55 μm in wavelength. Strained Si0.96Ge0.04 layer with a thickness of 2.5 μm is used as the waveguide core layer. Single mode ridge waveguide of 10 μm wide and 1µm deep is formed by plasma etching. The switching functiaa on is realized by total internal reflection. Two separate electrodes are used to control the refractive index change in the intersection region through carrier injection. The switch device can also work as splitter, modulator, or add-drop multiplexer, etc. around wavelength of 1.55 μm. An extinction ratio of about 20 dB is achieved for the modulation state from the two side input ports and about 10dB for the central input port.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jing Hua Teng, S. J. Chua, L. Y. Miao, R. Yin, B. J Li, E. A. Fitzgerald, and Christopher W. Leitz "A 3x2 waveguide switch based on SiGe for C-band operation", Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); https://doi.org/10.1117/12.545358
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