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18 August 2004 Hybrid silica sol-gel symmetric buried channel waveguide on silicon
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Abstract
Symmetric buried channel waveguides fabricated on silicon substrates by the organic-inorganic hybrid sol-gel process are reported. The buffer/cladding layer material is composed of methyl-modified silanes and presents high network flexibility and low refractive index, at low cost. Film thickness above 10 mm is possible without cracks, even after thermally baking the films at 150°C, and the refractive index is 1.468 at 632.8 nm. The influence of the methylsiloxane species on the material absorption loss was investigated, in particular at 1.55 mm. For channel waveguide core definition, a photopatternable layer was polymerised by 248 nm laser radiation through an amplitude mask, and the unexposed material was simply removed by an organic solvent. The transmission spectrum of the waveguides is presented and reveals an acceptable loss level of 0.3dB/cm at 1300 nm, but larger loss in the 1550 nm region. The procedure developed is compatible with optoelectronic integration in silicon.
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Paulo J. Moreira, Paulo V. S. Marques, and Antonio Pereira Leite "Hybrid silica sol-gel symmetric buried channel waveguide on silicon", Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); https://doi.org/10.1117/12.545845
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