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18 August 2004 Numerical simulations for the analysis of the dynamical behavior of an ultrafast InP/InGaAsP optoelectronic modulator
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Abstract
In this paper we present a simulation strategy for the accurate prediction of the functionality of an InP based optoelectronic modulator. The device is composed of an InP/InGaAsP p-i-n diode embedded in a rib waveguide and a Mach-Zehnder interferometer. Finite Element Analysis for both semiconductor and optical equations solution is exploited. The presented numerical results, indicating a reverse bias voltage of 5.5 V for a 180° phase shift in a 2 mm-long device, are confirmed by measured data. Transient simulation predicts that this structure is suitable for 40 Gbit/s operation.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francesco M. De Paola, Vincenzo d'Alessandro, Andrea Irace, Jan Hendrik den Besten, and Meint K. Smit "Numerical simulations for the analysis of the dynamical behavior of an ultrafast InP/InGaAsP optoelectronic modulator", Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); https://doi.org/10.1117/12.546364
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