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18 August 2004 Optical characterization of 1-GHz silicon-based optical modulator
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Abstract
In this paper the optical characterization of a novel, metal-oxide-silicon (MOS) capacitor-based, high speed, silicon optical modulator is presented. By using a capacitor based rather than the conventional p-i-n junction based architecture to modulate the free carrier density inside the waveguide, we show the realization of a fast, 2.5-GHz, optical modulator.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard Jones, Ling Liao, Ansheng Liu, Mike S. Salib, Doron Rubin, Oded Cohen, Dean A. Samara-Rubio, and Mario J. Paniccia "Optical characterization of 1-GHz silicon-based optical modulator", Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); https://doi.org/10.1117/12.565628
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