Translator Disclaimer
Paper
18 August 2004 Photoluminescence and waveguiding in sputtered films of Er-doped chalcogenide glasses
Author Affiliations +
Abstract
The spectral properties of Er3+-doped As2S3 and Ge33As12Se55 chalcogenide glasses are presented and discussed. Bulk samples and thin films have been studied. Bulk samples have been obtained by melt-quenching. Thin films have been obtained by RF sputtering. Sputtering targets have been fabricated from home-made cut and polished doped bulk samples and from commercial undoped targets with erbium pieces on the surface. The film morphology has been analysed by AFM and a column-like structure has been observed for the Ge33As12Se55 films. The presence of Er3+ ions in As2S3 and Ge33As12Se55 films has been confirmed by PL emission at 1.55 µm. A PL lifetime of 4 ms has been measured in Er-doped As2S3 films. Single mode waveguides have been fabricated by wet etching in Ge33As12Se55 films.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adam Fuchs, Jochen Fick, Viorel Balan, Caroline Vigreux, and Annie Pradel "Photoluminescence and waveguiding in sputtered films of Er-doped chalcogenide glasses", Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); https://doi.org/10.1117/12.545740
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Infrared sensor for water pollution and monitoring
Proceedings of SPIE (May 16 2017)
Glass and glass-ceramic photonic systems
Proceedings of SPIE (February 22 2017)
Comparison of Er-doped sol-gel glasses with various hosts
Proceedings of SPIE (November 12 1999)
Optical properties of GexAsxSe1-2x glasses
Proceedings of SPIE (December 03 2010)
Chalcogenide glass 1D photonic bandgap hollow fiber
Proceedings of SPIE (March 23 2005)

Back to Top