Raman emission in porous silicon at 1.54 micron

Luigi Sirleto; Varun Raghunathan; Andrea Mario Rossi; Bahram Jalali

doi:10.1117/12.579340

18 August 2004 Raman emission in porous silicon at 1.54 micron

Luigi Sirleto, Varun Raghunathan, Andrea Mario Rossi, Bahram Jalali

Proceedings Volume 5451, Integrated Optics and Photonic Integrated Circuits; (2004) https://doi.org/10.1117/12.579340
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

There have been many papers reporting visible luminescence and light emission at 1.54 micron, at room temperature, from porous silicon (Psi) and from Erbium doped Psi, respectively. These results have stimulated a great deal of excitement, because they suggest the possibility of a silicon based optoelectronics technology. In this paper, in order to generate radiation at 1.54 micron in Psi, a diffferent approach based on Raman scattering is presented. This approach has important advantages: no special impurities are required, so samples realisation is simple and chip; moreover enhancement of Raman scattering and nonlinear effects in nanostructured porous silicon could be experienced. Finally preliminary experimental results of Raman emission in porous silicon at 1.54 micron are reported.

Citation Download Citation

Luigi Sirleto, Varun Raghunathan, Andrea Mario Rossi, and Bahram Jalali "Raman emission in porous silicon at 1.54 micron", Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); https://doi.org/10.1117/12.579340

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