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18 August 2004 Raman emission in porous silicon at 1.54 micron
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Abstract
There have been many papers reporting visible luminescence and light emission at 1.54 micron, at room temperature, from porous silicon (Psi) and from Erbium doped Psi, respectively. These results have stimulated a great deal of excitement, because they suggest the possibility of a silicon based optoelectronics technology. In this paper, in order to generate radiation at 1.54 micron in Psi, a diffferent approach based on Raman scattering is presented. This approach has important advantages: no special impurities are required, so samples realisation is simple and chip; moreover enhancement of Raman scattering and nonlinear effects in nanostructured porous silicon could be experienced. Finally preliminary experimental results of Raman emission in porous silicon at 1.54 micron are reported.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luigi Sirleto, Varun Raghunathan, Andrea Mario Rossi, and Bahram Jalali "Raman emission in porous silicon at 1.54 micron", Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); https://doi.org/10.1117/12.579340
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