Paper
1 September 2004 Cavity solitons in driven VCSELS above threshold
Giovanna Tissoni, Igor Protsenko, Reza Kheradmand, Franco Prati, Massimo Brambilla, Luigi A. Lugiato
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Abstract
CSs have been theoretically predicted and recently experimentally demonstrated in broad area, vertical cavity, driven semiconductor lasers (VCSELs) slightly below the lasing threshold. Above threshold, the simple adiabatic elimination of the polarization variable is not correct, leading to oscillatory instabilities with a spuriously high critical wave-number. To achieve real insight on the complete dynamical problem, we study here the complete system of equations and find regimes where a Hopf instability, typical of lasers above threshold, affects the lower intensity branch of the homogeneous steady state, while the higher intensity branch is unstable due to a Turing instability. Numerical results obtained by direct integration of the dynamical equations show that writable/erasable CSs are possible in this regime, sitting on unstable background.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Giovanna Tissoni, Igor Protsenko, Reza Kheradmand, Franco Prati, Massimo Brambilla, and Luigi A. Lugiato "Cavity solitons in driven VCSELS above threshold", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); https://doi.org/10.1117/12.544775
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Cited by 2 scholarly publications.
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KEYWORDS
Laser damage threshold

Polarization

Solitons

Vertical cavity surface emitting lasers

Semiconductor lasers

Diffraction

Semiconductors

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