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1 September 2004 Multiwatt semiconductor disk lasers for near-infrared wavelengths
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Abstract
Optically-pumped semiconductor disk lasers offer high output power in combination with good beam quality. By optimizing epitaxial quality as well as thermal resistance, we have demonstrated more than 8W of continuous-wave, room-temperature emission at 1000nm. These high power-levels are tied to high optical-conversion efficiencies of more than 40%. Whereas available wavelengths for solid-state disk lasers are restricted to a set of atomic transitions, semiconductor disk lasers can be conveniently tailored to meet almost any wavelength. Building upon the high-power results at 1000nm, we have extended the emission range towards 900nm as well as 1100nm. Two prominent examples are devices realized at 920nm and 1040nm, in each case demonstrating several Watts of laser output.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Brick, Stephan Lutgen, Tony Albrecht, Wolfgang Reill, Johann Luft, Werner Spath, Bernardette Kunert, Stefan Reinhard, Kerstin Volz, and Wolfgang Stolz "Multiwatt semiconductor disk lasers for near-infrared wavelengths", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); https://doi.org/10.1117/12.544235
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